TRANSISTOR IC ARRAY

M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR IC ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transistor
arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor integrated
circuits perform high-current driving with extremely
low input-current supply.


Pin Diagram

datasheet




M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR IC ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington transistor
arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.

datasheet





M54528P
7- UNIT 150MA DARLINGTON TRANSISTOR IC ARRAY WITH CLAMP DIODE
Mitsubishi Electric Semiconductor
7- UNIT 150MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE


Pin Diagram

datasheet


CA3086
General Purpose NPN Transistor IC Array
Description
The CA3086 consists of five general-purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially
connected pair.
The transistors of the CA3086 are well suited to a wide variety
of applications in low-power systems at frequencies from
DC to 120MHz. They may be used as discrete transistors in
conventional circuits. However, they also provide the very
significant inherent advantages unique to integrated circuits,
such as compactness, ease of physical handling and thermal
matching


Pin Diagram

datasheet



ULN2803A DARLINGTON TRANSISTOR ARRAY


description
The ULN2803A is a high-voltage, high-current Darlington
Transistor ic array. The device consists of eight npn Darlington pairs
that feature high-voltage outputs with common-cathode clamp
diodes for switching inductive loads. The collector-current rating of
each Darlington pair is 500 mA. The Darlington pairs may be
connected in parallel for higher current capability.


Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line
drivers, and logic buffers. The ULN2803A has a 2.7-kseries base resistor for each Darlington pair for operation
directly with TTL or 5-V CMOS devices.


Pin Diagram

datasheet

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Surface Mount (SMD) Diode IC Array

BAS70JW
SURFACE MOUNT SCHOTTKY BARRIER DIODE IC ARRAY
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package ( SMD )
PN Junction Guard Ring for Transient and
ESD Protection


Pin Diagram

Datasheet



SD103ASDM
SURFACE MOUNT SCHOTTKY BARRIER DIODE IC ARRAY
Case: SOT-26, Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: See Diagram
Leads: Solderable per MIL-STD-202,
Method 208
Marking: KSU (See Page 2)
Weight: 0.016 grams (approx.)


Pin Diagram

Datasheet



FBAS70DW-06
SURFACE MOUNT SCHOTTKY BARRIER DIODE IC ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
􀁺 Low Forward Voltage Drop
􀁺 Fast Switching
􀁺 Ultra-Small Surface Mount Package


Pin Diagram

Datasheet

1N6508
MONOLITHIC AIR ISOLATED DIODE ARRAY


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Diode IC Array Data and Datasheet

SN74S1051
12-BIT SCHOTTKY BARRIER DIODE IC
BUS-TERMINATION ARRAY
description/ordering information
This Schottky barrier diode IC bus-termination array
is designed to reduce reflection noise on memory
bus lines. This device consists of a 12-bit
high-speed Schottky diode array suitable for
clamping to VCC and/or GND.
Pin Diagram

datasheet



SN74S1050
Description
This Schottky barrier diode IC bus-termination array is designed to reduce reflection noise on memory bus lines. This devcie consists of a 12-bit high-speed Schottky diode IC array suitable for a clamp to GND.
Pin Diagram

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UC1611
QUAD Schottky Diodes IC array
DESCRIPTION
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55ฐC to
125ฐC environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0ฐC to 70ฐC ambient
temperature range.
Pin Diagram

datasheet


UC3610
Dual Schottky Diode Bridge IC
DESCRIPTION
This eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
−55ฐC to 125ฐC environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for −25ฐC to 125ฐC
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0ฐC to 70ฐC temperature
range.


Pin Diagram

datasheet



74F1056
8-Bit Schottky Barrier Diode Array
General Description
The 74F1056 is an 8-bit Schottky barrier diode ic array
designed to be employed as termination on the inputs to
memory bus lines or CLOCK lines. This device is designed
to suppress negative transients caused by line reflections,
switching noise and crosstalk.


Pin Diagram

datasheet